The use of hexamethyldisiloxane (HMDSO) as an oxygen source for the growth of p-type silicon-based layers deposited by Plasma Enhanced Chemical Vapor Deposition is evaluated. The use of this source led to the incorporation of almost equivalent amounts of oxygen and carbon. resulting in microcrystalline silicon oxycarbide thin films. The layers were examined with characterisation techn... https://missouriquiltcoes.shop/product-category/sewing-machines/