In this report. we have overcome the drawback of surface roughness of metamorphic buffer layer by LP-MOCVD technique and have grown InP metamorphic buffer layers with various thickness on misoriented GaAs (1 0 0) substrates with 10 degree towards (1 1 1)A. The grown films are characterized by optical microscopy. atomic force microscopy. https://cosmeticssquadets.shop/product-category/welding-helmets/